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Flexible static memory controller (FSMC)
RM0008
the start address for read operations. Using the attribute memory space makes it
possible to use a different timing configuration of the FSMC, which can be used to
implement the prewait functionality needed by some NAND Flash memories (see
details in Section 19.6.5: NAND Flash pre-wait functionality on page 446 ).
4.
5.
6.
The controller waits for the NAND Flash to be ready (R/NB signal high) to become
active, before starting a new access (to same or another memory bank). While waiting,
the controller maintains the NCE signal active (low).
The CPU can then perform byte read operations in the common memory space to read
the NAND Flash page (data field + Spare field) byte by byte.
The next NAND Flash page can be read without any CPU command or address write
operation, in three different ways:
–
–
–
by simply performing the operation described in step 5
a new random address can be accessed by restarting the operation at step 3
a new command can be sent to the NAND Flash device by restarting at step 2
19.6.5
NAND Flash pre-wait functionality
Some NAND Flash devices require that, after writing the last part of the address, the
controller wait for the R/NB signal to go low as shown in Figure 176 .
Figure 176. Access to non ‘CE don’t care’ NAND-Flash
NCE must stay low
NCE
CLE
ALE
NWE
High
NOE
tR
I/O[7:0]
0x00
A7-A0
A16-A9 A24-A17 A25
tWB
R/NB
(1)
(2)
(3)
(4)
(5)
ai14733
1. CPU wrote byte 0x00 at address 0x7001 0000.
2. CPU wrote byte A7~A0 at address 0x7002 0000.
3. CPU wrote byte A16~A9 at address 0x7002 0000.
4. CPU wrote byte A24~A17 at address 0x7002 0000.
5. CPU wrote byte A25 at address 0x7802 0000: FSMC performs a write access using FSMC_PATT2 timing
definition, where ATTHOLD ? 7 (providing that (7+1) × HCLK = 112 ns > t WB max). This guarantees that
NCE remains low until R/NB goes low and high again (only requested for NAND Flash memories where
NCE is not don’t care).
446/995
Doc ID 13902 Rev 9
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